EFFECT OF HYDROSTATIC-PRESSURE ON THE BAND-GAP LUMINESCENCE OF STRAIN-ADJUSTED SIMGEN SUPERLATTICES

被引:4
作者
OLAJOS, J [1 ]
JIA, YB [1 ]
ENGVALL, J [1 ]
GRIMMEISS, HG [1 ]
KASPER, E [1 ]
KIBBEL, H [1 ]
PRESTING, H [1 ]
机构
[1] DAIMLER BENZ AG,RES CTR,W-7900 ULM,GERMANY
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 04期
关键词
D O I
10.1103/PhysRevB.49.2615
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report an experimental study of the band-gap photoluminescence from strain-adjusted SimGen (m=9,6,3; n=6,4,2) superlattices under applied hydrostatic pressure. The strain adjustment was achieved by a thick, step-graded Si1-xGex buffer layer resulting in an improved quality of the superlattice with respect to dislocation density. The no-phonon (NP) lines shift linearly under applied hydrostatic pressure in all superlattices to lower energies. The stress dependence was modeled using an approach based on deformation potentials and effective-mass theory. Under the assumptions made a close resemblance between experiment and theory was found. From the slopes of the stress shifts and amplitudes under various pressures, further evidence is given to an earlier assignment of the NP lines as arising from band-to-band recombination.
引用
收藏
页码:2615 / 2621
页数:7
相关论文
共 25 条
[1]   EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].
CHANDRASEKHAR, M ;
POLLAK, FH .
PHYSICAL REVIEW B, 1977, 15 (04) :2127-2144
[2]   NEW OPTICAL-TRANSITIONS IN STRAINED SI-GE SUPERLATTICES [J].
FROYEN, S ;
WOOD, DM ;
ZUNGER, A .
PHYSICAL REVIEW B, 1987, 36 (08) :4547-4550
[3]   STRUCTURAL AND ELECTRONIC-PROPERTIES OF EPITAXIAL THIN-LAYER SIN GEN SUPERLATTICES [J].
FROYEN, S ;
WOOD, DM ;
ZUNGER, A .
PHYSICAL REVIEW B, 1988, 37 (12) :6893-6907
[4]   TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].
HERRING, C ;
VOGT, E .
PHYSICAL REVIEW, 1956, 101 (03) :944-961
[5]   THEORY OF OPTICAL-TRANSITIONS IN SI/GE(001) STRAINED-LAYER SUPERLATTICES [J].
HYBERTSEN, MS ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1987, 36 (18) :9683-9693
[6]   ORIGIN OF THE OPTICAL-TRANSITIONS IN ORDERED SI/GE(001) SUPERLATTICES [J].
HYBERTSEN, MS ;
SCHLUTER, M ;
PEOPLE, R ;
JACKSON, SA ;
LANG, DV ;
PEARSALL, TP ;
BEAN, JC ;
VANDENBERG, JM ;
BEVK, J .
PHYSICAL REVIEW B, 1988, 37 (17) :10195-10198
[7]   OPTICAL-PROPERTIES OF SI-GE SUPERLATTICES [J].
JAROS, M ;
WONG, KB ;
TURTON, RJ .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (01) :35-43
[8]  
LAUE LD, 1971, PHYS REV B, V3, P2623
[9]   ANOMALOUS STRAIN RELAXATION IN SIGE THIN-FILMS AND SUPERLATTICES [J].
LEGOUES, FK ;
MEYERSON, BS ;
MORAR, JF .
PHYSICAL REVIEW LETTERS, 1991, 66 (22) :2903-2906
[10]   ENHANCED BAND-GAP LUMINESCENCE IN STRAIN-SYMMETRIZED (SI)M/(GE)N SUPERLATTICES [J].
MENCZIGAR, U ;
ABSTREITER, G ;
OLAJOS, J ;
GRIMMEISS, H ;
KIBBEL, H ;
PRESTING, H ;
KASPER, E .
PHYSICAL REVIEW B, 1993, 47 (07) :4099-4102