ANOMALOUS STRAIN RELAXATION IN SIGE THIN-FILMS AND SUPERLATTICES

被引:339
作者
LEGOUES, FK
MEYERSON, BS
MORAR, JF
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1103/PhysRevLett.66.2903
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We describe anomalous strain relaxation in graded SiGe superlattices and thin films. This relaxation is characterized by the presence of dislocations in the Si substrate, as well as in the lower part of the film or superlattice, and results in a dislocation-free top layer. This challenges the basic assumption, dating back to Van der Merwe, that the substrate does not participate in the strain-relief process. We show that this phenomenon is due to the paucity of nucleation sites, and controlled by the specific Ge concentration profile in the film. Relaxed, defect-free SixGe1-x films containing up to 60% Ge have been grown in this manner.
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页码:2903 / 2906
页数:4
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