ROLE OF STRAINED LAYER SUPERLATTICES IN MISFIT DISLOCATION REDUCTION IN GROWTH OF EPITAXIAL GE0.5 SI0.5 ALLOYS ON SI(100) SUBSTRATES

被引：57

作者：

HULL, R

BEAN, JC

LEIBENGUTH, RE

WERDER, DJ

机构：

来源：

关键词：

D O I：

10.1063/1.343223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4723 / 4729

页数：7

共 20 条

[1] BARIBEAU JM, 1988, 2ND P INT S SI MBE, V94, P88
[2] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS
BEAN, JC
SADOWSKI, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 137 - 142
[3] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON
BEAN, JC
BECKER, GE
PETROFF, PM
SEIDEL, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913
[4] BEAN JC, 1987, IN PRESS 2ND P INT S
[5] BEAN JC, 1984, J VAC TECHNOL A, V2, P936
[6] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW
DODSON, BW
TSAO, JY
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327
[7] GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
BEAN, JC
BROWN, JM
MACRANDER, AT
MILLER, RC
HOPKINS, LC
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 69 - 77
[8] FAN JCC, 1987, P MATERIALS RES SOC, V91
[9] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
FISCHER, R
MORKOC, H
NEUMANN, DA
ZABEL, H
CHOI, C
OTSUKA, N
LONGERBONE, M
ERICKSON, LP
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1640 - 1647
[10] HARRIS JS, 1987, HETEROEPITAXY SI 2, V91