GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：25

作者：

DUPUIS, RD

BEAN, JC

BROWN, JM

MACRANDER, AT

MILLER, RC

HOPKINS, LC

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 01期

关键词：

D O I：

10.1007/BF02667793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：69 / 77

页数：9

共 19 条

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