A PHENOMENOLOGICAL DESCRIPTION OF STRAIN RELAXATION IN GEXSI1-X/SI(100) HETEROSTRUCTURES

被引：93

作者：

HULL, R

BEAN, JC

BUESCHER, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 12期

关键词：

D O I：

10.1063/1.343604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5837 / 5843

页数：7

共 28 条

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[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
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[4] BEAN JC, 1985, MATER RES SOC S P, V37, P245
[5] STRESS DEPENDENCE OF DISLOCATION GLIDE ACTIVATION-ENERGY IN SINGLE-CRYSTAL SILICON-GERMANIUM ALLOYS UP TO 2.6 GPA
DODSON, BW
TSAO, JY
[J]. PHYSICAL REVIEW B, 1988, 38 (17): : 12383 - 12387
[6] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW
DODSON, BW
TSAO, JY
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327
[7] CORRECTION
DODSON, BW
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852
[8] DISLOCATION NUCLEATION NEAR THE CRITICAL THICKNESS IN GESI/SI STRAINED LAYERS
EAGLESHAM, DJ
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HUMPHREYS, CJ
BEAN, JC
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (05): : 1059 - 1073
[9] THE EFFECT OF SUBSTRATE GROWTH AREA ON MISFIT AND THREADING DISLOCATION DENSITIES IN MISMATCHED HETEROSTRUCTURES
FITZGERALD, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 782 - 788
[10] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH
FRANK, FC
VANDERMERWE, JH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225

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