ACTIVATION BARRIERS TO STRAIN RELAXATION IN LATTICE-MISMATCHED EPITAXY

被引:63
作者
HULL, R
BEAN, JC
WERDER, DJ
LEIBENGUTH, RE
机构
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 03期
关键词
D O I
10.1103/PhysRevB.40.1681
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1681 / 1684
页数:4
相关论文
共 14 条
[1]  
Alexander H., 1968, SOLID STATE PHYS, V22, P27
[2]  
BEAN JC, 1985, MATER RES SOC S P, V37, P245
[3]   RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].
DODSON, BW ;
TSAO, JY .
APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327
[4]   THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J].
FIORY, AT ;
BEAN, JC ;
HULL, R ;
NAKAHARA, S .
PHYSICAL REVIEW B, 1985, 31 (06) :4063-4065
[5]   NEW TYPE OF SOURCE GENERATING MISFIT DISLOCATIONS [J].
HAGEN, W ;
STRUNK, H .
APPLIED PHYSICS, 1978, 17 (01) :85-87
[6]  
Hull R., 1985, Thirteenth International Conference on Defects in Semiconductors, P505
[7]   INSITU OBSERVATIONS OF MISFIT DISLOCATION PROPAGATION IN GEXSI1-X/SI(100) HETEROSTRUCTURES [J].
HULL, R ;
BEAN, JC ;
WERDER, DJ ;
LEIBENGUTH, RE .
APPLIED PHYSICS LETTERS, 1988, 52 (19) :1605-1607
[8]   DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125
[9]   DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :265-273
[10]  
OSBURN GC, 1986, IEEE J QUANTUM ELECT, V22, P1677