NONDESTRUCTIVE MEASUREMENT OF LAYER THICKNESSES IN DOUBLE HETEROSTRUCTURES BY X-RAY-DIFFRACTION

被引：18

作者：

MACRANDER, AT

LAU, S

STREGE, K

CHU, SNG

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 23期

关键词：

D O I：

10.1063/1.99597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1985 / 1986

页数：2

共 10 条

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NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525

[2]

CASEY HC, 1978, HETEROSTRUCTURE LA B

[3]

CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378

[4] MISFIT STRESS IN INGAAS/INP HETEROEPITAXIAL STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J].

CHU, SNG ;

MACRANDER, AT ;

STREGE, KE ;

JOHNSTON, WD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :249-257

[5]

CHU SNG, 1986, J APPL PHYS, V60, P1238

[6] INTERFERENCE PEAKS IN DOUBLE-CRYSTAL X-RAY ROCKING CURVES OF LASER STRUCTURES [J].

CHU, X ;

TANNER, BK .

APPLIED PHYSICS LETTERS, 1986, 49 (26) :1773-1775

[7] DYNAMIC X-RAY ROCKING CURVE SIMULATIONS OF NONUNIFORM INGAAS AND INGAASP USING ABELES MATRIX-METHOD [J].

MACRANDER, AT ;

MINAMI, ER ;

BERREMAN, DW .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1364-1368

[8] X-RAY DOUBLE-CRYSTAL CHARACTERIZATION OF HIGHLY PERFECT INGAAS INP GROWN BY VAPOR-PHASE EPITAXY [J].

MACRANDER, AT ;

STREGE, KE .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :442-446

[9] AN EVALUATION OF (100) SULFUR DOPED INP FOR USE AS A 1ST CRYSTAL IN AN X-RAY DOUBLE-CRYSTAL DIFFRACTOMETER [J].

MACRANDER, AT ;

BONNER, WA ;

MONBERG, EM .

MATERIALS LETTERS, 1986, 4 (04) :181-184

[10]

MACRANDER AT, IN PRESS ADV XRAY AN

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