EXPLANATION OF LOW-FREQUENCY RELATIVE INTENSITY NOISE IN SEMICONDUCTOR-LASERS

被引：37

作者：

SU, CB ^{[1
]}

SCHLAFER, J ^{[1
]}

LAUER, RB ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 09期

关键词：

D O I：

10.1063/1.103385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the first time, the enhanced low-frequency relative intensity noise characteristics of semiconductor lasers is explained. It is shown, by multimode rate equation analysis, that the enhanced low-frequency noise is caused by coupling between longitudinal modes which can renormalize the resonance frequency of the individual modes to very low values. It is further shown that a single-mode laser will also exhibit enhanced low-frequency noise unless the side-mode suppression is high.

引用

页码：849 / 851

页数：3

共 9 条

[1] SIMULTANEOUS MEASUREMENT OF SPONTANEOUS EMISSION RATE, NONLINEAR GAIN COEFFICIENT, AND CARRIER LIFETIME IN SEMICONDUCTOR-LASERS USING A PARASITIC-FREE OPTICAL MODULATION TECHNIQUE [J].