THEORY AND EXPERIMENT OF THE PARASITIC-FREE FREQUENCY-RESPONSE MEASUREMENT TECHNIQUE USING FACET-PUMPED OPTICAL MODULATION IN SEMICONDUCTOR DIODE-LASERS

被引：17

作者：

LANGE, CH

SU, CB

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 17期

关键词：

D O I：

10.1063/1.102195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1704 / 1706

页数：3

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[1] OBSERVATION OF POSITIVE AND NEGATIVE NONLINEAR GAIN IN AN OPTICAL-INJECTION EXPERIMENT - PROOF OF THE CAVITY STANDING-WAVE-INDUCED NONLINEAR GAIN THEORY IN 1.3-MU-M WAVELENGTH SEMICONDUCTOR DIODE-LASERS
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[4] THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS
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[5] PARASITIC-FREE MEASUREMENT OF THE FUNDAMENTAL-FREQUENCY RESPONSE OF A SEMICONDUCTOR-LASER BY ACTIVE-LAYER PHOTOMIXING
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 770 - 772
[6] ULTRA-HIGH-SPEED MODULATION OF 1.3-MU-M INGAASP DIODE-LASERS
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