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OBSERVATION OF POSITIVE AND NEGATIVE NONLINEAR GAIN IN AN OPTICAL-INJECTION EXPERIMENT - PROOF OF THE CAVITY STANDING-WAVE-INDUCED NONLINEAR GAIN THEORY IN 1.3-MU-M WAVELENGTH SEMICONDUCTOR DIODE-LASERS
被引:22
作者
:
EOM, J
论文数:
0
引用数:
0
h-index:
0
EOM, J
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1989年
/ 54卷
/ 18期
关键词
:
D O I
:
10.1063/1.101274
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1734 / 1736
页数:3
相关论文
共 7 条
[1]
GAIN NONLINEARITIES IN SEMICONDUCTOR-LASERS - THEORY AND APPLICATION TO DISTRIBUTED FEEDBACK LASERS
AGRAWAL, GP
论文数:
0
引用数:
0
h-index:
0
AGRAWAL, GP
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1987,
23
(06)
: 860
-
868
[2]
SUBPICOSECOND GAIN DYNAMICS IN GAALAS LASER-DIODES
KESLER, MP
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
KESLER, MP
IPPEN, EP
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
IPPEN, EP
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(22)
: 1765
-
1767
[3]
MEASUREMENT OF INTRINSIC FREQUENCY-RESPONSE OF SEMICONDUCTOR-LASERS USING OPTICAL MODULATION
LANGE, CH
论文数:
0
引用数:
0
h-index:
0
机构:
GTE LABS INC,WALTHAM,MA 02254
GTE LABS INC,WALTHAM,MA 02254
LANGE, CH
EOM, J
论文数:
0
引用数:
0
h-index:
0
机构:
GTE LABS INC,WALTHAM,MA 02254
GTE LABS INC,WALTHAM,MA 02254
EOM, J
SU, CB
论文数:
0
引用数:
0
h-index:
0
机构:
GTE LABS INC,WALTHAM,MA 02254
GTE LABS INC,WALTHAM,MA 02254
SU, CB
SCHLAFER, J
论文数:
0
引用数:
0
h-index:
0
机构:
GTE LABS INC,WALTHAM,MA 02254
GTE LABS INC,WALTHAM,MA 02254
SCHLAFER, J
LAUER, RB
论文数:
0
引用数:
0
h-index:
0
机构:
GTE LABS INC,WALTHAM,MA 02254
GTE LABS INC,WALTHAM,MA 02254
LAUER, RB
[J].
ELECTRONICS LETTERS,
1988,
24
(18)
: 1131
-
1132
[4]
FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS
OLSHANSKY, R
论文数:
0
引用数:
0
h-index:
0
OLSHANSKY, R
HILL, P
论文数:
0
引用数:
0
h-index:
0
HILL, P
LANZISERA, V
论文数:
0
引用数:
0
h-index:
0
LANZISERA, V
POWAZINIK, W
论文数:
0
引用数:
0
h-index:
0
POWAZINIK, W
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1987,
23
(09)
: 1410
-
1418
[5]
ULTRA-HIGH-SPEED MODULATION OF 1.3-MU-M INGAASP DIODE-LASERS
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
LANZISERA, VA
论文数:
0
引用数:
0
h-index:
0
LANZISERA, VA
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1986,
22
(09)
: 1568
-
1578
[6]
DIELECTRIC GRATING INDUCED BY CAVITY STANDING WAVE AS A NEW EXPLANATION OF ORIGIN OF NONLINEAR GAIN IN SEMICONDUCTOR DIODE-LASERS
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
[J].
ELECTRONICS LETTERS,
1988,
24
(07)
: 370
-
371
[7]
NONLINEAR GAIN CAUSED BY CAVITY STANDING WAVE DIELECTRIC GRATING AS AN EXPLANATION OF THE RELATIONSHIP BETWEEN RESONANCE FREQUENCY AND DAMPING RATE OF SEMICONDUCTOR DIODE-LASERS
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(11)
: 950
-
952
←
1
→
共 7 条
[1]
GAIN NONLINEARITIES IN SEMICONDUCTOR-LASERS - THEORY AND APPLICATION TO DISTRIBUTED FEEDBACK LASERS
AGRAWAL, GP
论文数:
0
引用数:
0
h-index:
0
AGRAWAL, GP
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1987,
23
(06)
: 860
-
868
[2]
SUBPICOSECOND GAIN DYNAMICS IN GAALAS LASER-DIODES
KESLER, MP
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
KESLER, MP
IPPEN, EP
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
IPPEN, EP
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(22)
: 1765
-
1767
[3]
MEASUREMENT OF INTRINSIC FREQUENCY-RESPONSE OF SEMICONDUCTOR-LASERS USING OPTICAL MODULATION
LANGE, CH
论文数:
0
引用数:
0
h-index:
0
机构:
GTE LABS INC,WALTHAM,MA 02254
GTE LABS INC,WALTHAM,MA 02254
LANGE, CH
EOM, J
论文数:
0
引用数:
0
h-index:
0
机构:
GTE LABS INC,WALTHAM,MA 02254
GTE LABS INC,WALTHAM,MA 02254
EOM, J
SU, CB
论文数:
0
引用数:
0
h-index:
0
机构:
GTE LABS INC,WALTHAM,MA 02254
GTE LABS INC,WALTHAM,MA 02254
SU, CB
SCHLAFER, J
论文数:
0
引用数:
0
h-index:
0
机构:
GTE LABS INC,WALTHAM,MA 02254
GTE LABS INC,WALTHAM,MA 02254
SCHLAFER, J
LAUER, RB
论文数:
0
引用数:
0
h-index:
0
机构:
GTE LABS INC,WALTHAM,MA 02254
GTE LABS INC,WALTHAM,MA 02254
LAUER, RB
[J].
ELECTRONICS LETTERS,
1988,
24
(18)
: 1131
-
1132
[4]
FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS
OLSHANSKY, R
论文数:
0
引用数:
0
h-index:
0
OLSHANSKY, R
HILL, P
论文数:
0
引用数:
0
h-index:
0
HILL, P
LANZISERA, V
论文数:
0
引用数:
0
h-index:
0
LANZISERA, V
POWAZINIK, W
论文数:
0
引用数:
0
h-index:
0
POWAZINIK, W
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1987,
23
(09)
: 1410
-
1418
[5]
ULTRA-HIGH-SPEED MODULATION OF 1.3-MU-M INGAASP DIODE-LASERS
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
LANZISERA, VA
论文数:
0
引用数:
0
h-index:
0
LANZISERA, VA
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1986,
22
(09)
: 1568
-
1578
[6]
DIELECTRIC GRATING INDUCED BY CAVITY STANDING WAVE AS A NEW EXPLANATION OF ORIGIN OF NONLINEAR GAIN IN SEMICONDUCTOR DIODE-LASERS
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
[J].
ELECTRONICS LETTERS,
1988,
24
(07)
: 370
-
371
[7]
NONLINEAR GAIN CAUSED BY CAVITY STANDING WAVE DIELECTRIC GRATING AS AN EXPLANATION OF THE RELATIONSHIP BETWEEN RESONANCE FREQUENCY AND DAMPING RATE OF SEMICONDUCTOR DIODE-LASERS
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(11)
: 950
-
952
←
1
→