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ON TEMPERATURE DEPENDENCE OF MIXED CONDUCTION IN CR-DOPED GAAS
被引:12
作者
:
INOUE, T
论文数:
0
引用数:
0
h-index:
0
INOUE, T
OHYAMA, M
论文数:
0
引用数:
0
h-index:
0
OHYAMA, M
机构
:
来源
:
SOLID STATE COMMUNICATIONS
|
1970年
/ 8卷
/ 16期
关键词
:
D O I
:
10.1016/0038-1098(70)90627-7
中图分类号
:
O469 [凝聚态物理学];
学科分类号
:
070205 ;
摘要
:
引用
收藏
页码:1309 / &
相关论文
共 3 条
[1]
THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
HAISTY, RW
论文数:
0
引用数:
0
h-index:
0
HAISTY, RW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
: 874
-
877
[2]
Hilsum C., 1961, SEMICONDUCTING 3 5 C
[3]
NEGATIVE RESISTANCE IN CHROMIUM-DOPED GAAS P-I-N DIODES
SELWAY, PR
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Ltd., Harlow, Essex
SELWAY, PR
NICOLLE, WM
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Ltd., Harlow, Essex
NICOLLE, WM
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(10)
: 4087
-
&
←
1
→
共 3 条
[1]
THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
HAISTY, RW
论文数:
0
引用数:
0
h-index:
0
HAISTY, RW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
: 874
-
877
[2]
Hilsum C., 1961, SEMICONDUCTING 3 5 C
[3]
NEGATIVE RESISTANCE IN CHROMIUM-DOPED GAAS P-I-N DIODES
SELWAY, PR
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Ltd., Harlow, Essex
SELWAY, PR
NICOLLE, WM
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Ltd., Harlow, Essex
NICOLLE, WM
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(10)
: 4087
-
&
←
1
→