IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SILICON-ON-SAPPHIRE BY ION-IMPLANTATION AND FURNACE REGROWTH

被引：20

作者：

GOLECKI, I

NICOLET, MA

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(80)90142-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：803 / 806

页数：4

共 4 条

[1] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA
CSEPREGI, L
KENNEDY, EF
MAYER, JW
SIGMON, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911
[2] CRITICAL CHANNELING ANGLES OF LOW-ENERGY IONS IN SILICON
GRAHMANN, H
FEUERSTEIN, A
KALBITZER, S
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (02): : 117 - 119
[3] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUES
LAU, SS
MATTESON, S
MAYER, JW
REVESZ, P
GYULAI, J
ROTH, J
SIGMON, TW
CASS, T
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 76 - 78
[4] ROULET ME, 1979, ELECTRONICS LETT, V15, P529