CHARACTERIZATION OF SINGLE-CRYSTAL DIAMOND GROWN BY CHEMICAL VAPOR-DEPOSITION PROCESSES

Homoepitaxial diamond films have been deposited on natural diamond substrates by the hot-filament-assisted chemical vapour deposition technique and by the oxygen-acetylene combustion flame method. From the surface microtopographic, the fractographic and especially the spectroscopic characterization of these films it was observed that the crystallographic orientation of the substrate is an important factor for the quality of the epilayer. The incorporation of point defects such as boron, hydrogen and nitrogen is strongly dependent on both the substrate orientation and the deposition temperature. The best results were obtained for epilayers grown by the combustion flame on {100} substrates. © 1992.