PROPERTIES OF ZINC PHOSPHIDE ZINC-OXIDE HETEROJUNCTIONS

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 691 - 693

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[3] COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) : 233 - &

[4] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[5] POLYCRYSTALLINE ZN3P2 SCHOTTKY-BARRIER SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 39 - 41

[6] Brodie D. E., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P468

[7] DEFECT DOMINATED CONDUCTIVITY IN ZN3P2 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (06) : 635 - 640

[8] EVIDENCE OF P-N HOMOJUNCTION FORMATION IN ZN3P2 [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 567 - 569

[9] DEWALD P, 1960, BELL SYST TECH J, V39, P815

[10] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1468 - &

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 691 - 693

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[3] COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) : 233 - &

[4] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[5] POLYCRYSTALLINE ZN3P2 SCHOTTKY-BARRIER SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 39 - 41

[6] Brodie D. E., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P468

[7] DEFECT DOMINATED CONDUCTIVITY IN ZN3P2 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (06) : 635 - 640

[8] EVIDENCE OF P-N HOMOJUNCTION FORMATION IN ZN3P2 [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 567 - 569

[9] DEWALD P, 1960, BELL SYST TECH J, V39, P815

[10] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1468 - &