NONSTOICHIOMETRY OF TE-DOPED GAAS

被引：80

作者：

NISHIZAWA, JI ^{[1
]}

OTSUKA, H ^{[1
]}

YAMAKOSHI, S ^{[1
]}

ISHIDA, K ^{[1
]}

机构：

[1] TOHOKU UNIV, RES INST ELECT COMM, SENDAI, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 01期

关键词：

D O I：

10.1143/JJAP.13.46

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：46 / 56

页数：11

相关论文

共 32 条

[1] ANNEALING OF ELECTRON-IRRADIATED GAAS
AUKERMAN, LW
GRAFT, RD
[J]. PHYSICAL REVIEW, 1962, 127 (05): : 1576 - &
[2] AUKERMAN LW, 1968, SEMICONDUCTORS SEMIM, V4
[3] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIC
[4] BEHAVIOR OF LATTICE DEFECTS IN GAAS
BLANC, J
WEISBERG, LR
BUBE, RH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 225 - &
[5] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS
BLANC, J
WEISBERG, LR
BUBE, RH
[J]. PHYSICAL REVIEW LETTERS, 1962, 9 (06) : 252 - &
[6] BOLTAKS BI, 1965, FIZ TVERD TELA+, V7, P822
[7] EFFECT OF ARSENIC PRESSURE ON CRYSTAL EFFICIENCY FOR INJECTION LUMINESCENCE IN GALLIUM ARSENIDE
BRICE, JC
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (04) : 335 - &
[8] DYHAFAROV TD, 1971, SOV PHYS-SOLID STATE, V12, P2259
[9] HEAT TREATMENT OF GALLIUM ARSENIDE
EDMOND, JT
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1428 - 1430
[10] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE
FULLER, CS
WHELAND, JM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 173 - &

← 1 2 3 4 →