HIGH-EFFICIENCY, LOW-LEAKAGE MOCVD-GROWN GALNAS/ALLNAS HETEROJUNCTION PHOTODIODES FOR DETECTION TO 2.4MUM

被引：13

作者：

MOSELEY, AJ

SCOTT, MD

MOORE, AH

WALLIS, RH

机构：

[1] Plessey Research Ltd, Towcester, Engl, Plessey Research Ltd, Towcester, Engl

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 22期

关键词：

MICROSCOPIC EXAMINATION - Scanning Electron Microscopy - SEMICONDUCTOR DIODES; PHOTODIODE - SIGNAL DETECTION;

D O I：

10.1049/el:19860826

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photodiodes with a long-wavelength cutoff extending out to 2. 4 mu m have been fabricated from MOCVD-grown Ga//0//. //2//8-In//0//. //7//2As/Al//0//. //2//8In//0//. //7//2As heterostructures, using a compositionally graded buffer layer to accommodate the lattice mismatch between the active layer and the InP substrate. These devices exhibit peak efficiency as high as 95% at 1. 8-2. 2 mu m with dark currents as low as 35 nA at minus 0. 5 v reverse bias.

引用

页码：1206 / 1207

页数：2