PROPERTIES OF CDZNTE CRYSTALS GROWN BY A HIGH-PRESSURE BRIDGMAN METHOD

被引：148

作者：

DOTY, FP ^{[1
]}

BUTLER, JF ^{[1
]}

SCHETZINA, JF ^{[1
]}

BOWERS, KA ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.586264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CdZnTe crystals have been grown over the full range of alloy composition by a high-pressure Bridgman (HPB) method. Use of the inert gas over pressure reduces loss of material from the melt, and permits growth without the use of sealed ampoules, extending the range of possible alloys, and allowing a choice of crucible materials. The HPB method yields high-quality CdZnTe and enables room-temperature gamma radiation detectors to be made over large area wafers of undoped material for the first time.

引用

页码：1418 / 1422

页数：5

共 8 条

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