MULTIPLE PROTON ENERGY IRRADIATION FOR IMPROVED GTO THYRISTORS

被引：21

作者：

HALLEN, A

BAKOWSKI, M

LUNDQVIST, M

机构：

[1] SWEDISH INST MICROELECTR,S-16421 KISTA,SWEDEN

[2] UNIV UPPSALA,INST ELECTR,S-75121 UPPSALA,SWEDEN

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 02期

关键词：

D O I：

10.1016/0038-1101(93)90131-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton irradiation using three proton energies and a variety of fluence combinations has been used to improve the trade-off between steady-state and turn-off losses for Gate Turn-Off (GTO) thyristors. Using a fluence of 9 . 10(10) cm-2 near the anode, 4 . 10(10) cm-2 in the middle of the device and 1 . 10(10) cm-2 close to the blocking junction, the tum-off energy is reduced by 50% relative to electron-irradiated standard components. The electrical results are consistent with the results of infrared free carrier absorption measurements performed on single GTO thyristor cells during both steady state and turn-off. The charge dynamics in selected regions of the thyristor is discussed and charge carrier lifetime is deduced by analytical methods for various proton fluence and energy combinations.

引用

页码：133 / 141

页数：9