RESONANT RAMAN-SCATTERING IN AN INSB/IN1-XALXSB STRAINED-LAYER SUPERLATTICE AND IN IN1-XALXSB EPILAYERS INSB

Resonant Raman scattering was used to study an InSb/In1-xAlxSb strained-layer superlattice and the InSb and In1-xAlxSb parent materials. Resonant enhancement peaks were observed in epilayer films in the regions of the E1 and E1 + DELTA1 optical gaps. In the superlattice, two sets of peaks observed in the plots of the Raman cross section versus exciting photon energy are shown to originate from the independent electronic transitions in the alternating layers. The calculated resonance Raman profiles for two phonons in the alloy layers are in reasonable agreement with experiment. Estimates of the strain and confinement effects in these layers were made and these agree with the observed differences from the parent materials.