UHV CHAMBER FOR METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STUDIES

被引:4
作者
CRIDER, CA [1 ]
POATE, JM [1 ]
ROWE, JE [1 ]
WHEATLEY, GH [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期
关键词
D O I
10.1016/0029-554X(78)90955-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:701 / 704
页数:4
相关论文
共 4 条
[1]   PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J].
CANALI, C ;
CATELLANI, C ;
PRUDENZIATI, M ;
WADLIN, WH ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45
[2]  
HAGSTRUM HD, 1976, EXPT METHODS CATALYT, V3, pCH3
[3]   KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON [J].
POATE, JM ;
TISONE, TC .
APPLIED PHYSICS LETTERS, 1974, 24 (08) :391-393
[4]  
POATE JM, THIN FILMS INTERDIFF