学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
CHEMICAL STRUCTURES OF NATIVE OXIDES FORMED DURING WET CHEMICAL TREATMENTS
被引:52
作者
:
HATTORI, T
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
HATTORI, T
[
1
]
TAKASE, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
TAKASE, K
[
1
]
YAMAGISHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
YAMAGISHI, H
[
1
]
SUGINO, R
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
SUGINO, R
[
1
]
NARA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
NARA, Y
[
1
]
ITO, T
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
ITO, T
[
1
]
机构
:
[1]
FUJITSU LABS LTD,ATSUGI 24301,JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1989年
/ 28卷
/ 02期
关键词
:
D O I
:
10.1143/JJAP.28.L296
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L296 / L298
页数:3
相关论文
共 4 条
[1]
SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES
HATTORI, T
论文数:
0
引用数:
0
h-index:
0
HATTORI, T
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
SUZUKI, T
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(05)
: 470
-
472
[2]
KAO DB, 1988, 173RD M EL SOC ATL
[3]
Sugino R., 1987, 19TH C SOL STAT DEV, P207
[4]
SUZUKI T, 1986, JPN J APPL PHYS 1, V25, P544, DOI 10.1143/JJAP.25.544
←
1
→
共 4 条
[1]
SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES
HATTORI, T
论文数:
0
引用数:
0
h-index:
0
HATTORI, T
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
SUZUKI, T
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(05)
: 470
-
472
[2]
KAO DB, 1988, 173RD M EL SOC ATL
[3]
Sugino R., 1987, 19TH C SOL STAT DEV, P207
[4]
SUZUKI T, 1986, JPN J APPL PHYS 1, V25, P544, DOI 10.1143/JJAP.25.544
←
1
→