SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES

被引：87

作者：

HATTORI, T

SUZUKI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 05期

关键词：

D O I：

10.1063/1.94392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：470 / 472

页数：3

共 9 条

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[7] STOICHIOMETRY OF SIO2-SI INTERFACIAL REGIONS .1. ULTRATHIN OXIDE-FILMS [J].

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