INITIAL-STAGE OF SPUTTERING IN SILICON-OXIDE

被引：16

作者：

HATTORI, T

HISAJIMA, Y

SAITO, H

SUZUKI, T

DAIMON, H

MURATA, Y

TSUKADA, M

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

[2] UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 03期

关键词：

D O I：

10.1063/1.93902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：244 / 246

页数：3

相关论文

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