LPE LATERAL OVERGROWTH OF GAP

被引：23

作者：

ZHANG, S

NISHINAGA, T

机构：

[1] Department of Electronic Engineering, The University of Tokyo, Tokyo, 113, 7-3-1 Hongo, Bunkyo-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 03期

关键词：

Dislocation-free crystal; Epitaxial lateral overgrowth (ELO); GaP; Liquid phase epitaxy (LPE); Monomolecular growth step; Nitrogen doping; Spatially resolved photoluminescence;

D O I：

10.1143/JJAP.29.545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial lateral overgrowth (ELO) of GaP on SiO2-coated (111)B or (111)A GaP substrates was carried out successfully by LPE. It was found that the ELO of GaP showed dependency on seed orientation similar to that of GaAs. However, a pronounced asymmetry of lateral growth in [2;;11] and [2-1;;] orientations was found. Monomolecular growth steps on the ELO layer have been observed by a Nomarski differential interference contrast microscope equipped with an image processor without decoration. Nitrogen doping was performed, and its nonuniform distribution was investigated by a fluorescence microscope and spatially resolved photoluminescence. From the nonuniformity, an understanding of the ELO mechanism was derived. It was found that the epilayer had a much lower dislocation density than that in a substrate. It was concluded that wide and extremely flat GaP epilayers with high quality can be obtained by the ELO technique. © 1990 The Japan Society of Applied Physics.

引用

页码：545 / 550

页数：6

共 4 条

[1] STUDY OF NITROGEN INHOMOGENEITY IN LPE GAP BY SPATIALLY RESOLVED PHOTOLUMINESCENCE [J].