2-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED, ORDERED-DISORDERED GAINP2 HOMOJUNCTIONS

被引：7

作者：

DRIESSEN, FAJM

BAUHUIS, GJ

HAGEMAN, PR

GILING, LJ

机构：

[1] Department of Experimental Solid State Physics, Research Institute for Materials, University of Nijmegen, Toernooiveld

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.112278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance-voltage (C-V) profiling techniques and temperature-dependent Hall and resistivity measurements have been used to characterize modulation-doped ordered-GaInP2/disordered-GaInP2 homojunctions grown by metalorganic vapor phase epitaxy. The C-V measurements showed a narrow profile at the homointerface with an order of magnitude reduction in carrier density within 3 nm. Typical two-dimensional behavior was observed from Hall data showing sheet carrier densities as high as 3.6 X 10(13) CM-2 without carrier freeze out and constant mobilities around 900 cm2 V-1 s-1 below T=100 K. The 300 K channel conductivity of this new junction is 3.2 x 10(-3) OMEGA-1, which is higher than reported in other two-dimensional electron gases.

引用

页码：714 / 716

页数：3

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