CONDUCTION MECHANISMS IN ORDERED GAINP2 EPILAYERS

被引:12
作者
BAUHUIS, GJ
DRIESSEN, FAJM
GILING, LJ
机构
[1] Department of Experimental Solid State Physics, Research Institute for Materials, Univeristy of Nijmegen, NL-6525 ED Nijmegen, Toernooiveld
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 23期
关键词
D O I
10.1103/PhysRevB.48.17239
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A Hall-Van der Pauw and high-field magnetotransport study is reported on GaInP2 epilayers, which contain naturally ordered regions with lower band gap than that of the embedding disordered regions. Below T=200 K three conductivity mechanisms are distinguished in this material: hopping conduction with activation energy epsilon3 dominates for T < 30 K, band conduction with activation energy epsilon1 for T > 85 K, and epsilon2 conduction at intermediate temperatures with activation energy epsilon2. The behavior of the conductivity sigma in a transverse magnetic field B is found to be in good agreement with theory. The activation energy epsilon2 shows excellent quadratic dependence on B, and the preexponential factor sigma3 is proportional to exp(-constB0.54+/-0.04). Mobility data above T=200 K show unprecedented proof of cluster scattering: calculations based on the Harrison-Hauser/Marsh formalism revealed cluster radii of 3.5 nm and provided absolute values for the fractions of the crystal volume occupied by ordered clusters.
引用
收藏
页码:17239 / 17242
页数:4
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