BAND-STRUCTURE ENHANCEMENT OF INDIRECT TRANSITIONS

被引：21

作者：

AUVERGNE, D ^{[1
]}

MERLE, P ^{[1
]}

MATHIEU, H ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CNRS,CTR ETUD ELECTR SOLIDES,F-34060 MONTPELLIER,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 21卷 / 05期

关键词：

D O I：

10.1016/0038-1098(77)91369-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：437 / 439

页数：3

共 9 条

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[4]

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[5]

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[8] CONDUCTION-BAND STRUCTURE OF IN1-XGAXP ALLOY SYSTEM [J].

PITT, GD ;

VYAS, MKR ;

MABBITT, AW .

SOLID STATE COMMUNICATIONS, 1974, 14 (07) :621-625

[9] PHOTOLUMINESCENCE SPECTRUM OF BOUND EXCITONS IN INDIUM PHOSPHIDE AND GALLIUM ARSENIDE [J].

WHITE, AM ;

TAYLOR, LL ;

ASHEN, DJ ;

CLARKE, RC ;

MULLIN, JB ;

DEAN, PJ .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13) :1727-&

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