EXCITATION INTENSITY DEPENDENCE OF PHOTOLUMINESCENCE IN GA0.52IN0.48P

被引：83

作者：

DELONG, MC ^{[1
]}

TAYLOR, PC ^{[1
]}

OLSON, JM ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.103615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering and the band-gap energy of this material are functions of growth conditions. We report here on a PL emission which shifts rapidly with excitation intensity. The rate of emission shift is also a function of growth conditions including substrate orientation. There is, however, no significant correlation between the band-gap energy and the rate of emission shift in Ga 0.52In0.48P. This PL shift is explained in terms of band filling of potential fluctuations that are associated with a microstructure consisting of ordered domains within a disordered matrix.

引用

页码：620 / 622

页数：3

共 21 条

[1] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].