TRANSMISSION ELECTRON-MICROSCOPY STUDY OF THE EFFECT OF SELENIUM DOPING ON THE ORDERING OF GAINP2

Selenium doped Ga0.51In0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the order of 1018 cm-3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier concentration of 1019 cm-3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping. © 1990 AIME.