DOPED INGAP GROWN BY MOVPE ON GAAS

被引：30

作者：

IWAMOTO, T

MORI, K

MIZUTA, M

KUKIMOTO, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90392-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：27 / 31

页数：5

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[2] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXASYP1-Y ON GAAS
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[3] OPTICALLY PUMPED LASER OPERATION OF INGAASP/INGAP DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 24 - 26
[6] SUGOU S, 1984, THESIS TOKYO I TECHN
[7] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP
YOSHINO, J
IWAMOTO, T
KUKIMOTO, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 74 - 78
[8] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP (X APPROXIMATELY 0.5) ON GAAS
YOSHINO, J
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KUKIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : L290 - L292