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ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXASYP1-Y ON GAAS
被引:25
作者
:
IWAMOTO, T
论文数:
0
引用数:
0
h-index:
0
IWAMOTO, T
MORI, K
论文数:
0
引用数:
0
h-index:
0
MORI, K
MIZUTA, M
论文数:
0
引用数:
0
h-index:
0
MIZUTA, M
KUKIMOTO, H
论文数:
0
引用数:
0
h-index:
0
KUKIMOTO, H
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1983年
/ 22卷
/ 03期
关键词
:
D O I
:
10.1143/JJAP.22.L191
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L191 / L193
页数:3
相关论文
共 9 条
[1]
INASSBP-INAS SUPER-LATTICE GROWN BY ORGANOMETALLIC VPE METHOD
FUKUI, T
论文数:
0
引用数:
0
h-index:
0
FUKUI, T
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(09)
: L551
-
L554
[2]
THERMODYNAMIC ANALYSIS FOR INGAASP EPITAXIAL-GROWTH BY THE CHLORIDE-CVD PROCESS
KOUKITU, A
论文数:
0
引用数:
0
h-index:
0
KOUKITU, A
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
49
(02)
: 325
-
333
[3]
LUDOWISE MJ, 1982, UNPUB 1982 P INT S G
[4]
LPE GROWTH AND LUMINESCENCE OF IN1-XGAXPYAS1-Y ON (1, 0, 0) GAAS WITH BAND-GAP ENERGY IN THE REGION OF 1.569 EV LESS-THAN-OR EQUAL-TO EG LESS-THAN-OR EQUAL-TO 1.893 EV
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
MATSUZAKI, M
论文数:
0
引用数:
0
h-index:
0
MATSUZAKI, M
SHIMADA, JI
论文数:
0
引用数:
0
h-index:
0
SHIMADA, JI
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(09)
: L505
-
L508
[5]
BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
POLLACK, MA
JOHNSTON, WD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
JOHNSTON, WD
BARNS, RL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BARNS, RL
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(07)
: 659
-
661
[6]
ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.23-MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
RAZEGHI, M
HIRTZ, JP
论文数:
0
引用数:
0
h-index:
0
HIRTZ, JP
HIRTZ, P
论文数:
0
引用数:
0
h-index:
0
HIRTZ, P
LARIVAIN, JP
论文数:
0
引用数:
0
h-index:
0
LARIVAIN, JP
BONDEAU, R
论文数:
0
引用数:
0
h-index:
0
BONDEAU, R
DECREMOUX, B
论文数:
0
引用数:
0
h-index:
0
DECREMOUX, B
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
[J].
ELECTRONICS LETTERS,
1981,
17
(17)
: 597
-
598
[7]
USUI A, 1981, 11TH P GAAS REL COMP, P137
[8]
METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP
YOSHINO, J
论文数:
0
引用数:
0
h-index:
0
YOSHINO, J
IWAMOTO, T
论文数:
0
引用数:
0
h-index:
0
IWAMOTO, T
KUKIMOTO, H
论文数:
0
引用数:
0
h-index:
0
KUKIMOTO, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 74
-
78
[9]
ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP (X APPROXIMATELY 0.5) ON GAAS
YOSHINO, J
论文数:
0
引用数:
0
h-index:
0
YOSHINO, J
IWAMOTO, T
论文数:
0
引用数:
0
h-index:
0
IWAMOTO, T
KUKIMOTO, H
论文数:
0
引用数:
0
h-index:
0
KUKIMOTO, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(04)
: L290
-
L292
←
1
→
共 9 条
[1]
INASSBP-INAS SUPER-LATTICE GROWN BY ORGANOMETALLIC VPE METHOD
FUKUI, T
论文数:
0
引用数:
0
h-index:
0
FUKUI, T
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(09)
: L551
-
L554
[2]
THERMODYNAMIC ANALYSIS FOR INGAASP EPITAXIAL-GROWTH BY THE CHLORIDE-CVD PROCESS
KOUKITU, A
论文数:
0
引用数:
0
h-index:
0
KOUKITU, A
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
49
(02)
: 325
-
333
[3]
LUDOWISE MJ, 1982, UNPUB 1982 P INT S G
[4]
LPE GROWTH AND LUMINESCENCE OF IN1-XGAXPYAS1-Y ON (1, 0, 0) GAAS WITH BAND-GAP ENERGY IN THE REGION OF 1.569 EV LESS-THAN-OR EQUAL-TO EG LESS-THAN-OR EQUAL-TO 1.893 EV
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
MATSUZAKI, M
论文数:
0
引用数:
0
h-index:
0
MATSUZAKI, M
SHIMADA, JI
论文数:
0
引用数:
0
h-index:
0
SHIMADA, JI
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(09)
: L505
-
L508
[5]
BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
POLLACK, MA
JOHNSTON, WD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
JOHNSTON, WD
BARNS, RL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BARNS, RL
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(07)
: 659
-
661
[6]
ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.23-MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
RAZEGHI, M
HIRTZ, JP
论文数:
0
引用数:
0
h-index:
0
HIRTZ, JP
HIRTZ, P
论文数:
0
引用数:
0
h-index:
0
HIRTZ, P
LARIVAIN, JP
论文数:
0
引用数:
0
h-index:
0
LARIVAIN, JP
BONDEAU, R
论文数:
0
引用数:
0
h-index:
0
BONDEAU, R
DECREMOUX, B
论文数:
0
引用数:
0
h-index:
0
DECREMOUX, B
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
[J].
ELECTRONICS LETTERS,
1981,
17
(17)
: 597
-
598
[7]
USUI A, 1981, 11TH P GAAS REL COMP, P137
[8]
METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP
YOSHINO, J
论文数:
0
引用数:
0
h-index:
0
YOSHINO, J
IWAMOTO, T
论文数:
0
引用数:
0
h-index:
0
IWAMOTO, T
KUKIMOTO, H
论文数:
0
引用数:
0
h-index:
0
KUKIMOTO, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 74
-
78
[9]
ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP (X APPROXIMATELY 0.5) ON GAAS
YOSHINO, J
论文数:
0
引用数:
0
h-index:
0
YOSHINO, J
IWAMOTO, T
论文数:
0
引用数:
0
h-index:
0
IWAMOTO, T
KUKIMOTO, H
论文数:
0
引用数:
0
h-index:
0
KUKIMOTO, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(04)
: L290
-
L292
←
1
→