LPE GROWTH AND LUMINESCENCE OF IN1-XGAXPYAS1-Y ON (1, 0, 0) GAAS WITH BAND-GAP ENERGY IN THE REGION OF 1.569 EV LESS-THAN-OR EQUAL-TO EG LESS-THAN-OR EQUAL-TO 1.893 EV

被引：31

作者：

MUKAI, S

MATSUZAKI, M

SHIMADA, JI

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 09期

关键词：

D O I：

10.1143/JJAP.19.L505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：L505 / L508

页数：4

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