COMPOSITION DEPENDENCE OF THE BAND-GAPS OF IN1-XGAXAS1-YPY QUATERNARY SOLIDS LATTICE MATCHED ON INP SUBSTRATES

[1] DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) : 132 - 138

[2] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577

[3] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3201 - &

[4] ANTYPAS GA, 1977, 1976 S GAAS REL COMP, P96

[5] BLOM GM, 1970, APPL PHYS LETT, V17, P378

[6] Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746

[7] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +

[8] SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J]. ELECTRONICS LETTERS, 1977, 13 (16) : 484 - 485

[9] DOLGINOV LM, 1976, SOVIET PHYSICS SEMIC, V9, P871

[10] TRANSFERRED-ELECTRON PHOTOEMISSION TO 1.4 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 87 - 88

[1] DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) : 132 - 138

[2] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577

[3] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3201 - &

[4] ANTYPAS GA, 1977, 1976 S GAAS REL COMP, P96

[5] BLOM GM, 1970, APPL PHYS LETT, V17, P378

[6] Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746

[7] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +

[8] SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J]. ELECTRONICS LETTERS, 1977, 13 (16) : 484 - 485

[9] DOLGINOV LM, 1976, SOVIET PHYSICS SEMIC, V9, P871

[10] TRANSFERRED-ELECTRON PHOTOEMISSION TO 1.4 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 87 - 88