OPTICALLY PUMPED LASER OPERATION OF INGAASP/INGAP DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：4

作者：

IWAMOTO, T

MORI, K

MIZUTA, M

KUKIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 07期

关键词：

D O I：

10.1143/JJAP.22.L429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L429 / L431

页数：3

共 10 条

[1]

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[3] FABRICATION AND VISIBLE-LIGHT-EMISSION CHARACTERISTICS OF ROOM-TEMPERATURE-OPERATED INGAPAS DH DIODE-LASERS GROWN ON GAAS SUBSTRATES [J].

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[4]

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[5] CALCULATION OF MISCIBILITY GAP IN QUATERNARY INGAPAS WITH STRICTLY REGULAR SOLUTION APPROXIMATION [J].

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[6]

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[7] INSTABILITY OF IN-GA-AS-P LIQUID SOLUTION DURING LOW-TEMPERATURE LPE OF IN1-XGAXAS1-YPY ON INP [J].

TAKAHEI, K ;

NAGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L313-L316

[8]

USUI A, 1982, 1981 P INT S GAAS RE, P137

[9] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP [J].

YOSHINO, J ;

IWAMOTO, T ;

KUKIMOTO, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :74-78

[10] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP (X APPROXIMATELY 0.5) ON GAAS [J].

YOSHINO, J ;

IWAMOTO, T ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L290-L292

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