FABRICATION AND VISIBLE-LIGHT-EMISSION CHARACTERISTICS OF ROOM-TEMPERATURE-OPERATED INGAPAS DH DIODE-LASERS GROWN ON GAAS SUBSTRATES

被引：21

作者：

MUKAI, S

YAJIMA, H

SHIMADA, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 10期

关键词：

D O I：

10.1143/JJAP.20.L729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L729 / L732

页数：4

共 12 条

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[8] LPE GROWTH AND LUMINESCENCE OF IN1-XGAXPYAS1-Y ON (1, 0, 0) GAAS WITH BAND-GAP ENERGY IN THE REGION OF 1.569 EV LESS-THAN-OR EQUAL-TO EG LESS-THAN-OR EQUAL-TO 1.893 EV [J].

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[10] SURFACE DECOMPOSITION OF GAAS SUBSTRATES IN LPE GROWTH OF INGAASP AND ITS EFFECT ON CRYSTAL QUALITY [J].

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