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CONTINUOUSLY OPERATED VISIBLE-LIGHT-EMITTING LASERS USING LIQUID-PHASE-EPITAXIAL INGAPAS GROWN ON GAAS SUBSTRATES
被引:23
作者
:
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON INST TECHNOL,SAITAMA,JAPAN
NIPPON INST TECHNOL,SAITAMA,JAPAN
MUKAI, S
[
1
]
YAJIMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON INST TECHNOL,SAITAMA,JAPAN
NIPPON INST TECHNOL,SAITAMA,JAPAN
YAJIMA, H
[
1
]
MITSUHASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON INST TECHNOL,SAITAMA,JAPAN
NIPPON INST TECHNOL,SAITAMA,JAPAN
MITSUHASHI, Y
[
1
]
SHIMADA, J
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON INST TECHNOL,SAITAMA,JAPAN
NIPPON INST TECHNOL,SAITAMA,JAPAN
SHIMADA, J
[
1
]
KUTSUWADA, N
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON INST TECHNOL,SAITAMA,JAPAN
NIPPON INST TECHNOL,SAITAMA,JAPAN
KUTSUWADA, N
[
1
]
机构
:
[1]
NIPPON INST TECHNOL,SAITAMA,JAPAN
来源
:
APPLIED PHYSICS LETTERS
|
1983年
/ 43卷
/ 01期
关键词
:
D O I
:
10.1063/1.94155
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:24 / 26
页数:3
相关论文
共 17 条
[1]
COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Murray Hill
CASEY, HC
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Murray Hill
PANISH, MB
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(12)
: 4910
-
&
[2]
PULSED ROOM-TEMPERATURE OPERATION OF IN1-XGAXP1-ZASZ DOUBLE HETEROJUNCTION LASERS AT HIGH-ENERGY (6470 A, 1.916 EV)
COLEMAN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
COLEMAN, JJ
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HOLONYAK, N
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LUDOWISE, MJ
WRIGHT, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
WRIGHT, PD
CHIN, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
CHIN, R
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
GROVES, WO
KEUNE, DL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
KEUNE, DL
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(03)
: 167
-
169
[3]
DECREMOUX B, 1981, 1980 P INT S GAAS RE, P115
[4]
INFLUENCE OF HOT CARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD IN 1.3-MU-M INGAASP LASERS
ETIENNE, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
ETIENNE, B
SHAH, J
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
SHAH, J
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
LEHENY, RF
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
NAHORY, RE
[J].
APPLIED PHYSICS LETTERS,
1982,
41
(11)
: 1018
-
1020
[5]
NEW HETEROISOLATION STRIPE-GEOMETRY VISIBLE LIGHT EMITTING LASERS
ITOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
ITOH, K
INOUE, M
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
INOUE, M
TERAMOTO, I
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
TERAMOTO, I
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 421
-
426
[6]
CHEMICAL ETCHING OF INP AND GAINASP FOR FABRICATING LASER-DIODES AND INTEGRATED OPTICAL CIRCUITS
KAMBAYASH, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
KAMBAYASH, T
KITAHARA, C
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
KITAHARA, C
IGA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
IGA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(01)
: 79
-
85
[7]
KRESSEL H, 1978, J APPL PHYS, V49, P3140, DOI 10.1063/1.325307
[8]
BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION
MOON, RL
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
MOON, RL
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
ANTYPAS, GA
JAMES, LW
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
JAMES, LW
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1974,
3
(03)
: 635
-
644
[9]
PHOTO-LUMINESCENT AND ELECTRICAL-PROPERTIES OF INGAP AS MIXED-CRYSTALS LIQUID-PHASE-EPITAXIALLY GROWN ON (100) GAAS
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(05)
: 2635
-
2645
[10]
LPE GROWTH AND LUMINESCENCE OF INGAASP LATTICE-MATCHED TO (1,0,0) GAAS SUBSTRATES
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
SHIMADA, J
论文数:
0
引用数:
0
h-index:
0
SHIMADA, J
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(03)
: 321
-
326
←
1
2
→
共 17 条
[1]
COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Murray Hill
CASEY, HC
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Murray Hill
PANISH, MB
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(12)
: 4910
-
&
[2]
PULSED ROOM-TEMPERATURE OPERATION OF IN1-XGAXP1-ZASZ DOUBLE HETEROJUNCTION LASERS AT HIGH-ENERGY (6470 A, 1.916 EV)
COLEMAN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
COLEMAN, JJ
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HOLONYAK, N
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LUDOWISE, MJ
WRIGHT, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
WRIGHT, PD
CHIN, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
CHIN, R
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
GROVES, WO
KEUNE, DL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
KEUNE, DL
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(03)
: 167
-
169
[3]
DECREMOUX B, 1981, 1980 P INT S GAAS RE, P115
[4]
INFLUENCE OF HOT CARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD IN 1.3-MU-M INGAASP LASERS
ETIENNE, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
ETIENNE, B
SHAH, J
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
SHAH, J
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
LEHENY, RF
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
NAHORY, RE
[J].
APPLIED PHYSICS LETTERS,
1982,
41
(11)
: 1018
-
1020
[5]
NEW HETEROISOLATION STRIPE-GEOMETRY VISIBLE LIGHT EMITTING LASERS
ITOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
ITOH, K
INOUE, M
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
INOUE, M
TERAMOTO, I
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
TERAMOTO, I
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 421
-
426
[6]
CHEMICAL ETCHING OF INP AND GAINASP FOR FABRICATING LASER-DIODES AND INTEGRATED OPTICAL CIRCUITS
KAMBAYASH, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
KAMBAYASH, T
KITAHARA, C
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
KITAHARA, C
IGA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
IGA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(01)
: 79
-
85
[7]
KRESSEL H, 1978, J APPL PHYS, V49, P3140, DOI 10.1063/1.325307
[8]
BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION
MOON, RL
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
MOON, RL
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
ANTYPAS, GA
JAMES, LW
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
JAMES, LW
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1974,
3
(03)
: 635
-
644
[9]
PHOTO-LUMINESCENT AND ELECTRICAL-PROPERTIES OF INGAP AS MIXED-CRYSTALS LIQUID-PHASE-EPITAXIALLY GROWN ON (100) GAAS
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(05)
: 2635
-
2645
[10]
LPE GROWTH AND LUMINESCENCE OF INGAASP LATTICE-MATCHED TO (1,0,0) GAAS SUBSTRATES
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
SHIMADA, J
论文数:
0
引用数:
0
h-index:
0
SHIMADA, J
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(03)
: 321
-
326
←
1
2
→