OBSERVATION OF DONOR-RELATED DEEP LEVELS IN GAXIN1-XP (0.52-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.71)

被引:29
作者
KITAHARA, K [1 ]
HOSHINO, M [1 ]
OZEKI, M [1 ]
机构
[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 01期
关键词
D O I
10.1143/JJAP.27.L110
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L110 / L112
页数:3
相关论文
共 12 条
[1]   ENERGY-BANDS OF TERNARY ALLOY SEMICONDUCTORS - COHERENT-POTENTIAL-APPROXIMATION CALCULATIONS [J].
BUGAJSKI, M ;
KONTKIEWICZ, AM ;
MARIETTE, H .
PHYSICAL REVIEW B, 1983, 28 (12) :7105-7114
[2]   TRAPPING CHARACTERISTICS OF TE-RELATED CENTERS IN GAAS1-XPX [J].
CALLEJA, E ;
MUNOZ, E ;
JIMENEZ, B ;
GOMEZ, A ;
GARCIA, F ;
KELLERT, F .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5295-5301
[3]  
CRAVEN RA, 1979, J APPL PHYS, V50, P6335
[4]  
HOSHINO M, 1986, APPL PHYS LETT, V15, P983
[5]   SHALLOW AND DEEP DONOR LEVELS IN S-DOPED GA0.52IN0.48P GROWN BY CHLORIDE VPE [J].
KITAHARA, K ;
HOSHINO, M ;
KODAMA, K ;
OZEKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03) :L191-L193
[6]   2-DIMENSIONAL-ELECTRON GAS IN UNDOPED AND SELECTIVELY-DOPED GAINP/GAAS HETEROSTRUCTURES GROWN BY CHLORIDE-VAPOR-PHASE EPITAXY [J].
KITAHARA, K ;
HOSHINO, M ;
KODAMA, K ;
OZEKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1119-L1121
[7]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[8]   DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].
MIZUTA, M ;
TACHIKAWA, M ;
KUKIMOTO, H ;
MINOMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L143-L146
[9]   SHALLOW AND DEEP DONORS IN DIRECT-GAP N-TYPE ALXGA1-XAS-SI GROWN BY MOLECULAR-BEAM EPITAXY [J].
SCHUBERT, EF ;
PLOOG, K .
PHYSICAL REVIEW B, 1984, 30 (12) :7021-7029
[10]   A SIMPLE CALCULATION OF THE DX CENTER CONCENTRATION BASED ON AN L-DONOR MODEL [J].
TACHIKAWA, M ;
MIZUTA, M ;
KUKIMOTO, H ;
MINOMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10) :L821-L823