A SIMPLE CALCULATION OF THE DX CENTER CONCENTRATION BASED ON AN L-DONOR MODEL

被引：64

作者：

TACHIKAWA, M ^{[1
]}

MIZUTA, M ^{[1
]}

KUKIMOTO, H ^{[1
]}

MINOMURA, S ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC SCI,DEPT PHYS,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 10期

关键词：

D O I：

10.1143/JJAP.24.L821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L821 / L823

页数：3

共 9 条

[1] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[2] ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP [J].

CHEN, AB ;

SHER, A .

PHYSICAL REVIEW B, 1981, 23 (10) :5360-5374

[3] SULFUR-RELATED TRAP IN GAAS1-XPX [J].

CRAVEN, RA ;

FINN, D .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6334-6343

[4] METASTABLE DONOR STATES IN TE- DOPED GA1-XALXSB COMPOUNDS [J].

KONCZEWICZ, L ;

LITWINSTASZEWSKA, E ;

POROWSKI, S ;

ILLER, A ;

AULOMBARD, RL ;

ROBERT, JL ;

JOULLIE, A .

PHYSICA B & C, 1983, 117 (MAR) :92-95

[5] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[6] ELECTRON-TRANSPORT AND BAND-STRUCTURE OF GA1-XALXAS ALLOYS [J].

LEE, HJ ;

JURAVEL, LY ;

WOOLLEY, JC ;

SPRINGTHORPE, AJ .

PHYSICAL REVIEW B, 1980, 21 (02) :659-669

[7] PRESSURE AND COMPOSITIONAL DEPENDENCES OF THE HALL-COEFFICIENT IN ALXGA1-XAS AND THEIR SIGNIFICANCE [J].

LIFSHITZ, N ;

JAYARAMAN, A ;

LOGAN, RA ;

CARD, HC .

PHYSICAL REVIEW B, 1980, 21 (02) :670-678

[8] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].

MIZUTA, M ;

TACHIKAWA, M ;

KUKIMOTO, H ;

MINOMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L143-L146

[9] DONOR LEVELS IN SI-DOPED ALGAAS GROWN BY MBE [J].

WATANABE, MO ;

MORIZUKA, K ;

MASHITA, M ;

ASHIZAWA, Y ;

ZOHTA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L103-L105

← 1 →