SHALLOW AND DEEP DONOR LEVELS IN S-DOPED GA0.52IN0.48P GROWN BY CHLORIDE VPE

被引：6

作者：

KITAHARA, K

HOSHINO, M

KODAMA, K

OZEKI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 03期

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D O I：

10.1143/JJAP.25.L191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L191 / L193

页数：3

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