TRAPPING CHARACTERISTICS OF TE-RELATED CENTERS IN GAAS1-XPX

被引：35

作者：

CALLEJA, E ^{[1
]}

MUNOZ, E ^{[1
]}

JIMENEZ, B ^{[1
]}

GOMEZ, A ^{[1
]}

GARCIA, F ^{[1
]}

KELLERT, F ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,DIV OPTOELECTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.335484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5295 / 5301

页数：7

共 14 条

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[8]

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[9] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

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