ELECTRON TRAP BEHAVIOR IN TE-DOPED GAAS0.6P0.4

被引：19

作者：

HENNING, ID ^{[1
]}

THOMAS, H ^{[1
]}

机构：

[1] UWIST,DEPT PHYS ELECTR & ELECT ENGN,CARDIFF CF1 3NU,S GLAM,WALES

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 04期

关键词：

D O I：

10.1016/0038-1101(82)90142-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：325 / 333

页数：9

相关论文

共 21 条

[1] PERSISTENT PHOTOCONDUCTIVITY IN DONOR-DOPED CD-1-XZN-XTE
BURKEY, BC
KHOSLA, RP
FISCHER, JR
LOSEE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1095 - 1102
[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
CHIANG, SY
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991
[3] CRAFORD M, 1973, PROG SOLID ST CHEM, V8, P125
[4] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION
CRAFORD, MG
STILLMAN, GE
ROSSI, JA
HOLONYAK, N
[J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &
[5] SULFUR-RELATED TRAP IN GAAS1-XPX
CRAVEN, RA
FINN, D
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6334 - 6343
[6] NON-RADIATIVE RECOMBINATION CENTERS IN GAAS0.6P0.4 RED LIGHT-EMITTING DIODES
FORBES, L
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 635 - 640
[7] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[8] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS
JAROS, M
BRAND, S
[J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505
[9] WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS
JAROS, M
[J]. PHYSICAL REVIEW B, 1977, 16 (08): : 3694 - 3706
[10] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION
LANG, DV
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (22) : 1525 - 1528