ELECTRON TRAP BEHAVIOR IN TE-DOPED GAAS0.6P0.4

被引:19
作者
HENNING, ID [1 ]
THOMAS, H [1 ]
机构
[1] UWIST,DEPT PHYS ELECTR & ELECT ENGN,CARDIFF CF1 3NU,S GLAM,WALES
关键词
D O I
10.1016/0038-1101(82)90142-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:325 / 333
页数:9
相关论文
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