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ELECTRON TRAPS IN GAAS1-XPX ALLOYS

被引：23
作者：
CALLEJA, E
MUNOZ, E
GARCIA, F
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 06期
关键词：
D O I：
10.1063/1.93993
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：528 / 530
页数：3
相关论文
共 7 条
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    [J]. SOLID-STATE ELECTRONICS, 1982, 25 (04) : 325 - 333
  • [5] NATIVE LEVELS AND DEGRADATION IN GAAS0.6P0.4 LEDS
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    [J]. SOLID-STATE ELECTRONICS, 1979, 22 (01) : 81 - 85
  • [6] NEW TECHNIQUE FOR IDENTIFICATION OF DEEP-LEVEL TRAP EMISSION TO INDIRECT CONDUCTION MINIMA IN GAAS
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    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 259 - 261
  • [7] DONOR ENERGY-LEVEL FOR SE IN GA1-XALXAS
    YANG, JJ
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    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 244 - 246
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