NATIVE LEVELS AND DEGRADATION IN GAAS0.6P0.4 LEDS

被引：10

作者：

LOPEZ, C

GARCIA, A

GARCIA, F

MUNOZ, E

机构：

[1] Escuela Técnica Superior de Ingenieros de Telecomunicación, Universidad Politécnica, Madrid, 3, Ciudad Universitaria

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 01期

关键词：

D O I：

10.1016/0038-1101(79)90175-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The native level structure in Te-doped GaAs0.6P0.4 LED's has been studied by transient capacitance techniques. The presence of deep electron traps at 0.56 and 0.38 eV below the conduction band, and hole traps at 0.65 and 0.41 eV above the valence band has been shown. Several shallow levels and a residual IR emission are also present. Forward bias degradation has been investigated and related to the native level and IR radiation evolution. © 1979.

引用

页码：81 / 85

页数：5

共 15 条

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