OPTICAL AND ELECTRICAL QUALITY OF INGAP GROWN ON GAAS WITH LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

The growth of InGaP has been investigated in a low pressure MOCVD reactor. Experiments have been performed in order to study the influence of several parameters on the growth process, such as the influence of the growth temperature, V/III ratio and total gas flow on the solid composition and on the growth rate. The optical and electrical quality of the grown InGaP layers is discussed in relation to the amount of lattice mismatch of the epilayers. Finally the morphology of the epitaxial InGaP layers is described. A defect, typical for the growth of InGaP on GaAs, is presented. A hypothesis of the origin of this defect is given which results in a method to avoid its formation.