A MASS-SPECTROMETRIC STUDY OF THE SIMULTANEOUS REACTION-MECHANISM OF TMIN AND PH3 TO GROW INP

被引：42

作者：

BUCHAN, NI ^{[1
]}

LARSEN, CA ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

机构：

[1] UNIV UTAH,DEPT ENGN,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 92卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(88)90045-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Semiconducting Indium Compounds

引用

页码：605 / 615

页数：11

共 43 条

[1] ON THE ROLE OF HYDROGEN IN THE MOCVD OF GAAS [J].

ARENS, G ;

HEINECKE, H ;

PUTZ, N ;

LUTH, H ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :305-310

[2] ULTRAVIOLET INDUCED METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS [J].

BALK, P ;

HEINECKE, H ;

PUTZ, N ;

PLASS, C ;

LUTH, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :711-715

[3] MASS-SPECTROMETRIC STUDIES OF TRIMETHYLINDIUM PYROLYSIS [J].

BUCHAN, NI ;

LARSEN, CA ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1988, 92 (3-4) :591-604

[4] ELUCIDATION OF THE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH MECHANISM FOR INP [J].

BUCHAN, NI ;

LARSEN, CA ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1024-1026

[5] INSITU, REAL-TIME DIAGNOSTICS OF OMVPE USING IR-DIODE LASER SPECTROSCOPY [J].

BUTLER, JE ;

BOTTKA, N ;

SILLMON, RS ;

GASKILL, DK .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :163-171

[6] GROWTH OF ULTRAPURE INP BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CHEN, CH ;

KITAMURA, M ;

COHEN, RM ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1986, 49 (15) :963-965

[7] MOVPE GROWTH OF INP USING ISOBUTYLPHOSPHINE AND TERT-BUTYLPHOSPHINE [J].

CHEN, CH ;

LARSEN, CA ;

STRINGFELLOW, GB ;

BROWN, DW ;

ROBERTSON, AJ .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :11-18

[8] MO-CVD GROWTH OF INGAAS USING ME3GA, ASME3, ASH3 AND ME3IN OR ET3IN AND ANALYSES OF ADDUCTS FORMED DURING THE GROWTH-PROCESS [J].

CHENG, CH ;

JONES, KA ;

MOTYL, KM .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (04) :703-726

[9]

CHU LF, 1985, APPL PHYS LETT, V47, P47

[10] HOMOGENEOUS AND HETEROGENEOUS THERMAL-DECOMPOSITION RATES OF TRIMETHYLGALLIUM AND ARSINE AND THEIR RELEVANCE TO THE GROWTH OF GAAS BY MOCVD [J].

DENBAARS, SP ;

MAA, BY ;

DAPKUS, PD ;

DANNER, AD ;

LEE, HC .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :188-193

← 1 2 3 4 5 →