ON THE ROLE OF HYDROGEN IN THE MOCVD OF GAAS

被引：26

作者：

ARENS, G

HEINECKE, H

PUTZ, N

LUTH, H

BALK, P

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 76卷 / 02期

关键词：

D O I：

10.1016/0022-0248(86)90375-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：305 / 310

页数：6

共 19 条

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[10] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J].

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