GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION DEPENDENCES OF MOVING EMISSION AND ORDERING IN GA0.52IN0.48P

被引：20

作者：

DELONG, MC ^{[1
]}

TAYLOR, PC ^{[1
]}

OLSON, JM ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：948 / 954

页数：7

共 31 条

[1] ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS
ALIBERT, C
CHEVALLI.J
BORDURE, G
LAUGIER, A
[J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1301 - &
[2] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
BELLON, P
CHEVALIER, JP
MARTIN, GP
DUPONTNIVET, E
THIEBAUT, C
ANDRE, JP
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 567 - 569
[3] Dean P. J., 1973, PROGR SOLID STATE CH, V8, P1
[4] DELONG MC, IN PRESS
[5] (ALAS)1/2(GAAS)1/2 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL GAAS SUBSTRATES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
FUKUI, T
SAITO, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1373 - 1377
[6] OPTICAL-PROPERTIES OF INP DOPING SUPERLATTICES GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
GAL, M
VINER, JM
TAYLOR, PC
YAUN, JS
STRINGFELLOW, GB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02): : 504 - 507
[7] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
KOBAYASHI, K
KAWATA, S
HINO, I
SUZUKI, T
YUASA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
[8] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
GOMYO, A
SUZUKI, T
IIJIMA, S
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (25) : 2645 - 2648
[9] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF THE EFFECT OF SELENIUM DOPING ON THE ORDERING OF GAINP2
GORAL, JP
KURTZ, SR
OLSON, JM
KIBBLER, A
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (01) : 95 - 99
[10] GORAL JP, 1988, EPITAXY SEMICONDUCTO, V102, P583

← 1 2 3 4 →