DISORDERING OF THE ORDERED STRUCTURE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GA0.5IN0.5P ON (001) GAAS SUBSTRATES BY ZINC DIFFUSION

被引：50

作者：

DABKOWSKI, FP ^{[1
]}

GAVRILOVIC, P ^{[1
]}

MEEHAN, K ^{[1
]}

STUTIUS, W ^{[1
]}

WILLIAMS, JE ^{[1
]}

SHAHID, MA ^{[1
]}

MAHAJAN, S ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT MET ENGN & MAT SCI,PITTSBURGH,PA 15213

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 25期

关键词：

D O I：

10.1063/1.99558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2142 / 2144

页数：3

共 10 条

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[8] EXCITON ABSORPTION, PHOTOLUMINESCENCE AND BAND-STRUCTURE OF N-FREE AND N-DOPED IN-1-XGA-XP [J].

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[10] ATOMIC-STRUCTURE OF ORDERED INGAP CRYSTALS GROWN ON (001)GAAS SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11) :L1824-L1827

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