PARABOLIC GROWTH OF NONUNIFORMLY DOPED OXIDES CONTAINING ALIOVALENT IMPURITIES ON DILUTE ALLOYS

被引：8

作者：

GESMUNDO, F ^{[1
]}

VIANI, F ^{[1
]}

机构：

[1] UNIV GENOA,CHIM INGEGNERIA LAB,I-16132 GENOA,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 03期

关键词：

D O I：

10.1149/1.2123937

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：622 / 633

页数：12

共 23 条

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[9] APPLICATION OF WAGNER THEORY TO THE PARABOLIC GROWTH OF OXIDES CONTAINING DIFFERENT KINDS OF DEFECTS .2. DOPED OXIDES [J].

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[10]

GESMUNDO F, 1979, CORROS SCI, V19, P675, DOI 10.1016/S0010-938X(79)80140-7

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