APPLICATION OF WAGNER THEORY TO THE PARABOLIC GROWTH OF OXIDES CONTAINING DIFFERENT KINDS OF DEFECTS .2. DOPED OXIDES

被引：32

作者：

GESMUNDO, F

VIANI, F

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 02期

关键词：

D O I：

10.1149/1.2127440

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：470 / 479

页数：10

共 29 条

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GESMUNDO F, UNPUBLISHED

[7] HALL-MOBILITY AND DEFECT STRUCTURE IN UNDOPED AND CR OR TI-DOPED COO AT HIGH-TEMPERATURE [J].

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